MRF1K50N: 1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

For additional information and sample availability contact your local NXP® Sales Office or NXP Authorized Distributor.

OM-1230-4L, OM-1230G-4L Package Image
特性
  • High drain-source avalanche energy absorption capability
  • Unmatched input and output
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30 to 50 V
  • RoHS compliant
  • Recommended driver: MRFE6VS25N (25 W)
特性
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Laser generation
  • Plasma etching
  • Particle accelerators
  • MRI, diathermy, skin laser and ablation
  • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Radio broadcast
  • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • VHF omnidirectional range (VOR)
  • HF and VHF communications
  • Weather radar
  • Mobile Radio
    • VHF and UHF base stations
  • VHF and UHF base stations
Data Sheets (1)
Name/DescriptionModified Date
MRF1K50N 1500 W CW, 1.8-500 MHz, 50 V Data Sheet (REV 0) PDF (841.3 kB) MRF1K50N03 Nov 2016
Application Notes (2)
Name/DescriptionModified Date
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN1027310 Dec 2015
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00506D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins (REV C) PDF (72.8 kB) 98ASA00506D15 Feb 2016
Printed Circuit Boards
Schematics
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
PRF1K50NIntroduction Pending1.85005061.815001500 @ PeakPulse22.7 @ 23072.8UnmatchedABLDMOS
PRF1K50GNIntroduction Pending1.85005061.815001500 @ PeakPulse22.7 @ 23072.8UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM-1230G-4L98ASA00818DMPQ - 50 REELPOQ - 50 BOXIntroduction PendingPRF1K50GNPRF1K50GN.pdf3260
OM-1230-4L98ASA00506DMPQ - 50 REELPOQ - 50 BOXIntroduction PendingPRF1K50NPRF1K50N.pdf3260
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00818D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins mrfe6vp61k25n
PRF1K50GN.pdf MRF1K50N
98ASA00506D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 5 Pins mrfe6vp61k25n
PRF1K50N.pdf MRF1K50N