MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, W-CDMA RF Power LDMOS Transistors

Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain: 15.5 dB Drain Efficiency: 36% IMD: –34 dBc
Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130–2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain: 15.5 dB Drain Efficiency: 15% IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth
Typical Single–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930–1990 MHz), IS–95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain: 15.5 dB Drain Efficiency: 16% ACPR @ 885 kHz Offset = –60 dBc in 30 kHz Bandwidth
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805–1880 MHz) Power Gain: 16 dB Drain Efficiency: 33% EVM: 1.3% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Name/Description	Modified Date
MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF... (REV 4) PDF (895.7 kB) MRF6S20010N	24 Jan 2014

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D	30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A	26 Feb 2016

Product	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MRF6S20010NR1	Active	1600	2200	28	40	10	1 @ AVG	W-CDMA	15.5 @ 2170	15	2.5	Input	AB	LDMOS
MRF6S20010GNR1	Active	1600	2200	28	40	10	1 @ AVG	W-CDMA	15.5 @ 2170	15	2.5	Input	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	MSL	PPT (°C)
TO-270-2 GULL	98ASA99301D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF6S20010GNR1	MRF6S20010GNR1.pdf		3	260
TO-270-2	98ASH98117A	MPQ - 500 REELPOQ - 500 REEL	Active	MRF6S20010NR1	MRF6S20010NR1.pdf		3	260