MRF6V12500H: 960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors
NI-780H-2L, NI-780S-2L, NI-780GS-2L Package Image
特性
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- These products are included in our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet (REV 5) PDF (824.5 kB) MRF6V12500H | 13 Jul 2016 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 | 04 Sep 2015 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
White Papers (1)
| Name/Description | Modified Date |
|---|---|
| 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP | 08 Sep 2011 |
Package Information (3)
| Name/Description | Modified Date |
|---|---|
| 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C | 22 Mar 2016 |
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
| 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins (REV C) PDF (46.9 kB) 98ASA00193D | 26 Feb 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF6V12500GSR5 | Active | 960 | 1215 | 50 | 57 | 500 | 500 @ Peak | Pulse | 19.7 @ 1030 | 62 | 0.044 | I/O | AB | LDMOS | |
| MRF6V12500HSR5 | Active | 960 | 1215 | 50 | 57 | 500 | 500 @ Peak | Pulse | 19.7 @ 1030 | 62 | 0.044 | I/O | AB | LDMOS | |
| MRF6V12500HR5 | Active | 960 | 1215 | 50 | 57 | 500 | 500 @ Peak | Pulse | 19.7 @ 1030 | 62 | 0.044 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780 | 98ASB15607C | MPQ - 50 REELPOQ - 50 REEL | Active | MRF6V12500HR5 | MRF6V12500HR5.pdf |   | 260 |
| NI-780S | 98ASB16718C | MPQ - 50 REELPOQ - 50 REEL | Active | MRF6V12500HSR5 | MRF6V12500HSR5.pdf | | 260 |
| NI-780GS-2L | 98ASA00193D | MPQ - 50 REELPOQ - 50 REEL | Active | MRF6V12500GSR5 | MRF6V12500GSR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Solutions for Commercial Aerospace mrfe6vs25n
- RF Products Selector Guide MMT20303H
- 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
- 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
- MRF6V12500HR5.pdf MRF6V12500H
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- MRF6V12500HSR5.pdf MRF6V12500H
- 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins mrf6v12500h
- MRF6V12500GSR5.pdf MRF6V12500H
