MRF6V13250H: 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

NI-780, NI-780S Package Image
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 20 V to 50 V for Extended Power Range
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF6V13250HR3, MRF6V13250HSR3 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs (REV 1) PDF (858.4 kB) MRF6V13250H15 Jul 2011
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR160804 Sep 2015
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP08 Sep 2011
Package Information (2)
Name/DescriptionModified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF6V13250HSR5Active96015005054250250 @ PeakPulse22.7 @ 1300570.07InputABLDMOS
MRF6V13250HR5Active96015005054250250 @ PeakPulse22.7 @ 1300570.07InputABLDMOS
MRF6V13250HSR3No Longer Manufactured96015005054250250 @ PeakPulse22.7 @ 1300570.07InputABLDMOS
MRF6V13250HR3No Longer Manufactured96015005054250250 @ PeakPulse22.7 @ 1300570.07InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S98ASB16718CMPQ - 50 REELPOQ - 50 REELActiveMRF6V13250HSR5MRF6V13250HSR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6V13250HSR3MRF6V13250HSR3.pdf260
NI-78098ASB15607CMPQ - 50 REELPOQ - 50 REELActiveMRF6V13250HR5MRF6V13250HR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6V13250HR3MRF6V13250HR3.pdf260
MRF6V13250HR3, MRF6V13250HSR3 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs mrf6v13250h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MRF6V13250HR5.pdf MRF6V13250H
MRF6V13250HR3.pdf MRF6V13250H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MRF6V13250HSR5.pdf MRF6V13250H
MRF6V13250HSR3.pdf MRF6V13250H