MRF6VP11KH: 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

NI-1230-4, NI-1230S-4 Gull Package Image
特性
  • Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 26 dB Drain Efficiency: 71%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF6VP11KHR6, MRF6VP11KGSR5 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband - Data Sheet (REV 8) PDF (826.0 kB) MRF6VP11KH28 Sep 2012
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (2)
Name/DescriptionModified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR159303 Oct 2014
Broadcast Solutions (REV 5) PDF (818.6 kB) BR160708 Sep 2011
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP08 Sep 2011
Package Information (2)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins (REV B) PDF (48.5 kB) 98ASA00459D29 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF6VP11KGSR5Active1.8150506010001000 @ PeakPulse26 @ 130710.03UnmatchedABLDMOS
MRF6VP11KHR5Active1.8150506010001000 @ PeakPulse26 @ 130710.03UnmatchedABLDMOS
MRF6VP11KHR6No Longer Manufactured1.8150506010001000 @ PeakPulse26 @ 130710.03UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230S-4 GULL98ASA00459DMPQ - 50 REELPOQ - 50 REELActiveMRF6VP11KGSR5MRF6VP11KGSR5.pdf260
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXActiveMRF6VP11KHR5MRF6VP11KHR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP11KHR6MRF6VP11KHR6.pdf260
Datasheet
MRF6VP11KHR6, MRF6VP11KGSR5 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband - Data Sheet mrf6vp11kh
Other
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins mrfe6vp61k25h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
Broadcast Solutions mrfe6vp8600h
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
MRF6VP11KGSR5.pdf MRF6VP11KH
MRF6VP11KHR5.pdf MRF6VP11KH
MRF6VP11KHR6.pdf MRF6VP11KH
RF Products Selector Guide MMT20303H