MRF7S19170H: 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
NI-880, NI-880S Package Image
特性
- Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain: 17.2 dB Drain Efficiency: 32% Device Output Signal PAR: 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset: –37.5 dBc in 3.84 MHz Channel Bandwidth
- Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW Output Power
- Pout @ 1 dB Compression Point ≥ 170 Watts CW
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF7S19170HR3, MRF7S19170HSR3 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 2) PDF (920.6 kB) MRF7S19170H | 31 Mar 2011 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins (REV F) PDF (41.4 kB) 98ARB18660C | 01 Mar 2016 |
| 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins (REV G) PDF (47.3 kB) 98ARB18493C | 04 Feb 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF7S19170HSR3 | Not Recommended for New Design | 1930 | 1990 | 28 | 52.3 | 170 | 50 @ AVG | W-CDMA | 17.2 @ 1990 | 32 | 0.31 | I/O | AB | LDMOS |
| MRF7S19170HR3 | No Longer Manufactured | 1930 | 1990 | 28 | 52.3 | 170 | 50 @ AVG | W-CDMA | 17.2 @ 1990 | 32 | 0.31 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-880S | 98ARB18660C | MPQ - 250 REELPOQ - 250 BOX | Not Recommended for New Design | MRF7S19170HSR3 | MRF7S19170HSR3.pdf |   | 260 |
| NI-880 | 98ARB18493C | No Longer Manufactured | MRF7S19170HR3 | MRF7S19170HR3.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins mrf6s24140h
- MRF7S19170HSR3.pdf MRF7S19170H
- 98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins mrf6s24140h
- MRF7S19170HR3.pdf MRF7S19170H
