MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 240 MHz.
Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Name/Description	Modified Date
MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF... (REV 1) PDF (471.5 kB) MRF8P20140WH	15 Nov 2013

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D	15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D	21 Mar 2016
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins (REV C) PDF (47.2 kB) 98ASA00238D	26 Feb 2016

Name/Description	Modified Date
MRF8P20165WH and MRF8P20165WH/HS: LDMOS Transistors Cover Full Wireless Bands (REV 1) PDF (587.7 kB) MRF8P20140WH_20165WH_TRN_SI	29 Apr 2011

Product	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MRF8P20140WGHSR3	Active	1880	2025	28	51.5	140	24 @ AVG	W-CDMA	16 @ 1920	43.7	0.68	I/O	AB, C	LDMOS
MRF8P20140WHR3	Active	1880	2025	28	51.5	140	24 @ AVG	W-CDMA	16 @ 1920	43.7	0.68	I/O	AB, C	LDMOS
MRF8P20140WHSR3	Active	1880	2025	28	51.5	140	24 @ AVG	W-CDMA	16 @ 1920	43.7	0.68	I/O	AB, C	LDMOS
MRF8P20140WHR5	No Longer Manufactured	1880	2025	28	51.5	140	24 @ AVG	W-CDMA	16 @ 1920	43.7	0.68	I/O	AB, C	LDMOS
MRF8P20140WHSR5	No Longer Manufactured	1880	2025	28	51.5	140	24 @ AVG	W-CDMA	16 @ 1920	43.7	0.68	I/O	AB, C	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	PPT (°C)
NI-780GS-4L	98ASA00238D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8P20140WGHSR3	MRF8P20140WGHSR3.pdf	260
NI 780H-4	98ASA10793D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8P20140WHR3	MRF8P20140WHR3.pdf	260
NI 780H-4	98ASA10793D		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8P20140WHR5	MRF8P20140WHR5.pdf	260
NI-780HS-4	98ASA10718D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8P20140WHSR3	MRF8P20140WHSR3.pdf	260
NI-780HS-4	98ASA10718D		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8P20140WHSR5	MRF8P20140WHSR5.pdf	260