MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
NI-780S-4 Package Image
特性
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8P20161HSR3 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET (REV 0) PDF (491.4 kB) MRF8P20161HS | 26 Oct 2010 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D | 15 Aug 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8P20161HSR3 | Not Recommended for New Design | 1880 | 1920 | 28 | 49.9 | 97 | 37 @ AVG | W-CDMA | 16.4 @ 1920 | 45.8 | 0.76 | I/O | AB, C | LDMOS |
| MRF8P20161HSR5 | No Longer Manufactured | 1880 | 1920 | 28 | 49.9 | 97 | 37 @ AVG | W-CDMA | 16.4 @ 1920 | 45.8 | 0.76 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780HS-4 | 98ASA10718D | MPQ - 250 REELPOQ - 250 BOX | Not Recommended for New Design | MRF8P20161HSR3 | MRF8P20161HSR3.pdf |   | 260 |
| No Longer Manufactured | MRF8P20161HSR5 | MRF8P20161HSR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
- MRF8P20161HSR3.pdf MRF8P20161H
- MRF8P20161HSR5.pdf MRF8P20161H
