MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
NI-780, NI-780S Package Image
特性
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8S21120HR3, MRF8S21120HSR3 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 0) PDF (517.7 kB) MRF8S21120H | 25 May 2010 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C | 22 Mar 2016 |
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8S21120HSR3 | Active | 2110 | 2170 | 28 | 50.3 | 107 | 28 @ AVG | W-CDMA | 17.6 @ 2170 | 34 | 0.53 | I/O | AB | LDMOS |
| MRF8S21120HR3 | No Longer Manufactured | 2110 | 2170 | 28 | 50.3 | 107 | 28 @ AVG | W-CDMA | 17.6 @ 2170 | 34 | 0.53 | I/O | AB | LDMOS |
| MRF8S21120HSR5 | No Longer Manufactured | 2110 | 2170 | 28 | 50.3 | 107 | 28 @ AVG | W-CDMA | 17.6 @ 2170 | 34 | 0.53 | I/O | AB | LDMOS |
| MRF8S21120HR5 | No Longer Manufactured | 2110 | 2170 | 28 | 50.3 | 107 | 28 @ AVG | W-CDMA | 17.6 @ 2170 | 34 | 0.53 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S | 98ASB16718C | MPQ - 250 REELPOQ - 250 REEL | Active | MRF8S21120HSR3 | MRF8S21120HSR3.pdf |   | 260 |
| No Longer Manufactured | MRF8S21120HSR5 | MRF8S21120HSR5.pdf | | 260 | |||
| NI-780 | 98ASB15607C | MPQ - 250 REELPOQ - 250 REEL | No Longer Manufactured | MRF8S21120HR3 | MRF8S21120HR3.pdf | | 260 |
| No Longer Manufactured | MRF8S21120HR5 | MRF8S21120HR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- MRF8S21120HSR3.pdf MRF8S21120H
- MRF8S21120HSR5.pdf MRF8S21120H
- 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
- MRF8S21120HR3.pdf MRF8S21120H
- MRF8S21120HR5.pdf MRF8S21120H
