MRF8VP13350N: 700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors
OM-780-4L, OM-780G-4L Package Image
特性
- Internally input matched for ease of use
- Device can be used single-ended or in a push-pull configuration
- Qualified up to a maximum of 50 VDD operation
- Suitable for linear application with appropriate biasing
- Integrated ESD protection
- RoHS Compliant
特性
- 915 MHz industrial heating/welding systems
- 1300 MHz particle accelerators
- 900 MHz TETRA base stations
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8VP13350N 700–1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors (REV 1) PDF (677.4 kB) MRF8VP13350N | 15 Oct 2015 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D | 22 Mar 2016 |
| 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D | 22 Mar 2016 |
Supporting Information (1)
| Name/Description | Modified Date |
|---|---|
| New NXP® RF Industrial Transistor (REV 0) PDF (421.7 kB) MRF8VP13350N_TRN_SL | 05 May 2015 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8VP13350GNR3 | Active | 700 | 1300 | 50 | 55.4 | 350 | 350 @ CW | CW | 20.7 @ 915 | 67.5 | 0.04 | Input | AB | LDMOS | |
| MRF8VP13350NR3 | Active | 700 | 1300 | 50 | 55.4 | 350 | 350 @ CW | CW | 20.7 @ 915 | 67.5 | 0.04 | Input | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-4 GULL PLASTIC | 98ASA10834D | MPQ - 250 REELPOQ - 250 BOX | Active | MRF8VP13350GNR3 | MRF8VP13350GNR3.pdf |   | 3 | 260 |
| OM780-4 PLASTIC | 98ASA10833D | MPQ - 250 REELPOQ - 250 BOX | Active | MRF8VP13350NR3 | MRF8VP13350NR3.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- New NXP® RF Industrial Transistor mrf8vp13350n
- 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
- MRF8VP13350GNR3.pdf MRF8VP13350N
- 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
- MRF8VP13350NR3.pdf MRF8VP13350N
