MRFE6S9046N: 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW, f = 960 MHz Power Gain = 19 dB Drain Efficiency = 57%
Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃ 45 Watts CW
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg., Full Frequency Band (920–960 MHz) Power Gain = 19 dB Drain Efficiency = 42.5% Spectral Regrowth @ 400 kHz Offset = –62.5 dBc Spectral Regrowth @ 600 kHz Offset = –72 dBc EVM = 2.1% rms
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Name/Description	Modified Date
MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 0) PDF (645.8 kB) MRFE6S9046N	14 May 2009

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D	18 Jan 2016

Product	Status	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MRFE6S9046GNR1	Not Recommended for New Design		920	960	28	46.5	45	35.5 @ CW	1-Tone	19 @ 960	57	1.3	I/O	AB	LDMOS
MRFE6S9046NR1	No Longer Manufactured		920	960	28	46.5	45	35.5 @ CW	1-Tone	19 @ 960	57	1.3	I/O	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	MSL	PPT (°C)
TO-270 WB-4 GULL	98ASA10578D	MPQ - 500 REELPOQ - 500 REEL	Not Recommended for New Design	MRFE6S9046GNR1	MRFE6S9046GNR1.pdf		3	260
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MRFE6S9046NR1	MRFE6S9046NR1.pdf		3	260