MRFG35003N6AT1: 3.5 GHz, 3 W , 6 V Power FET GaAs pHEMT
PLD 1.5 Package Image
特性
- Typical Single–Carrier W–CDMA Performance: VDD = 6 Volts, IDQ = 180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 10 dB Drain Efficiency: 27% ACPR @ 5 MHz Offset: –42.5 dBc in 3.84 MHz Channel Bandwidth
- 3 Watts P1dB @ 3550 MHz, CW
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRFG35003N6AT1, 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT (REV 2) PDF (221.0 kB) MRFG35003N6A | 19 Jun 2009 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Fact Sheets (1)
| Name/Description | Modified Date |
|---|---|
| Power GaAs pHEMT Fact Sheet (REV 0) PDF (294.7 kB) GAASPHEMTFS | 12 Apr 2012 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins (REV E) PDF (51.5 kB) 98ASB15740C | 22 Mar 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Min-Max) (V) | P1dB (Typ) (dBm) | Test Signal | Gain (Typ) (dB) @ f (MHz) | Thermal Resistance (Spec)(°C/W) | Class |
|---|---|---|---|---|---|---|---|---|---|
| MRFG35003N6AT1 | Active | 500 | 5000 | 6 to 6 | 34.8 | W-CDMA | 10 @ 3550 | 5.9 | AB |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| PLD-1.5 | 98ASB15740C | MPQ - 1000 REELPOQ - 1000 BOX | Active | MRFG35003N6AT1 | MRFG35003N6AT1.pdf |  | 3 | 260 |
- MRFG35003N6AT1, 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT MRFG35003N6AT1
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Power GaAs pHEMT Fact Sheet MMG3014NT1
- RF Products Selector Guide MMT20303H
- 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1
- MRFG35003N6AT1.pdf MRFG35003N6AT1
