MW6IC1940N: 1920-2000 MHz, 40 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers

Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 28.5 dB Power Added Efficiency: 13.5% IM3 @ 10 MHz Offset: –43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset: –46 dBc in 3.84 MHz Bandwidth
Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band (1920–2000 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 27 dB IM3 @ 10 MHz Offset: –59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset: –62 dBc in 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW Output Power
Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 20 W CW Pout.
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Name/Description	Modified Date
MW6IC1940GNBR1 1920-2000 MHz, 40 W, 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived (REV 3.1) PDF (867.6 kB) MW6IC1940N-1	31 Dec 2009
MW6IC1940NBR1 1920-2000 MHz, 40 W, 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers (REV 4.1) PDF (855.9 kB) MW6IC1940N-2	31 Dec 2009

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263	07 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977	09 Oct 2003

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP	15 May 2015

Name/Description	Modified Date
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins (REV R) PDF (81.8 kB) 98ARH99164A	29 Feb 2016
98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic (REV F) PDF (50.1 kB) 98ASA10532D	30 Jun 2007

Product	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MW6IC1940NBR1	Active	1920	2000	28	46	40	4.5 @ AVG	W-CDMA	28.5 @ 1920	13.5	1.2	I/O	AB	LDMOS
MW6IC1940GNBR1	No Longer Manufactured	1920	2000	28	46	40	4.5 @ AVG	W-CDMA	28.5 @ 1920	13.5	1.2	I/O	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	MSL	PPT (°C)
TO-272 WB-16	98ARH99164A	MPQ - 500 REELPOQ - 500 REEL	Active	MW6IC1940NBR1	MW6IC1940NBR1.pdf		3	260
TO-272 WB-16 GULL	98ASA10532D		No Longer Manufactured	MW6IC1940GNBR1	MW6IC1940GNBR1.pdf		3	260