MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET
PLD 1.5 Package Image
特性
- Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain: 18 dB Drain Efficiency: 33% IMD: –34 dBc
- Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain: 19 dB Drain Efficiency: 33% IMD: –39 dBc
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- On-Chip RF Feedback for Broadband Stability
- Integrated ESD Protection
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET (REV 4) PDF (510.6 kB) MW6S004N | 19 Jun 2009 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins (REV E) PDF (51.5 kB) 98ASB15740C | 22 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MW6S004NT1 | Active | 1 | 2000 | 28 | 36 | 4 | 4 @ PEP | 2-Tone | 18 @ 1960 | 33 | 8.8 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| PLD-1.5 | 98ASB15740C | MPQ - 1000 REELPOQ - 1000 BOX | Active | MW6S004NT1 | MW6S004NT1.pdf |  | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1
- MW6S004NT1.pdf MW6S004NT1
