MW7IC915N: 728-960 MHz, 1.6 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier

PQFN 8x8 Package Image
特性
  • Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MW7IC915NT1 728-960 MHz, 1.6 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Data Sheet (REV 2) PDF (625.4 kB) MW7IC915N16 Dec 2013
Application Notes (4)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778 (REV 0) PDF (632.0 kB) AN377826 Feb 2010
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP15 May 2015
Package Information (1)
Name/DescriptionModified Date
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins (REV B) PDF (44.4 kB) 98ASA10760D21 Mar 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MW7IC915NT1Active8658952841.915.51.6 @ AVGW-CDMA38 @ 88017.43.2InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
PWR QFN 24 8*8*2.1P0.898ASA10760DMPQ - 1000 REELPOQ - 1000 REELActiveMW7IC915NT1MW7IC915NT1.pdf3260
MW7IC915NT1 728-960 MHz, 1.6 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Data Sheet MW7IC915N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778 MMG3006NT1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
MW7IC915NT1 CAD DXF File MW7IC915N
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins MMRF2006N
MW7IC915NT1.pdf MW7IC915N