Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Name/Description | Modified Date |
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40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET (REV 1.0) PDF (828.0 kB) PBSM5240PFH [English] | 20 Jun 2012 |
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DFN2020-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (198.0 kB) SOT1118 [English] | 08 Feb 2016 |
Name/Description | Modified Date |
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DFN2020-6; reel pack; standard orientation; 12NC ending 115 (REV 1.0) PDF (196.0 kB) SOT1118_115 [English] | 07 Nov 2012 |
Name/Description | Modified Date |
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PBSM5240PFH NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSM5240PFH_1 [English] | 31 Jan 2015 |
PBSM5240PFH NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSM5240PFH_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
Product | Status | Package version | Package name | Size (mm) | transistor polarity | Transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
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PBSM5240PFH | Active | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | PNP | 1 | 1250 | -40 | -1.8 | -3 | 100 | 100 | 240 | 340 | -310 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSM5240PFH | SOT1118 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PBSM5240PFH,115 (9340 665 62115) | 1T | PBSM5240PFH | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |