PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB.
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15 V, 0.5 A PNP low VCEsat (BISS) transistor (REV 1.0) PDF (526.0 kB) PBSS3515MB | 08 Mar 2012 |
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Next generation of NXP® low VCEsat transistors: improved technology for discrete semiconductors (REV 3.0) PDF (1.3 MB) AN11045 | 04 Mar 2013 |
Thermal behavior of small-signal discretes on multilayer PCBs (REV 1.0) PDF (211.0 kB) AN11076 | 12 Jul 2011 |
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DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm (REV 1.0) PDF (181.0 kB) SOT883B | 08 Feb 2016 |
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Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... (REV 1.0) PDF (206.0 kB) SOT883B_315 | 22 Jul 2016 |
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PBSS3515MB NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS3515MB_1 | 31 Jan 2015 |
PBSS3515MB NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS3515MB_NXP_PRODUCT_QUALITY | 31 Jan 2015 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE | 30 Sep 2013 |
Product | Status | Package version | Package name | Size (mm) | transistor polarity | Transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | VCEsat [max] (mV) | RCEsat [max] (mΩ) |
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PBSS3515MB | Active | SOT883B | DFN1006B-3 | 1 x 0.6 x 0.37 | PNP | 1 | 250 | -15 | -0.5 | -1 | 200 | 100 | 280 | -25 | 500 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSS3515MB | SOT883B | Reflow_Soldering_Profile | Reel 7" Q1/T1 Pitch 2mm | Active | PBSS3515MB,315 (9340 658 77315) | 0001 0011 | PBSS3515MB | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |