PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.
NPN complement: PBSS4160V.
Name/Description | Modified Date |
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60 V, 1 A PNP low V_CEsat (BISS) transistor (REV 3.0) PDF (146.0 kB) PBSS5160V | 25 Jan 2010 |
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Thermal behavior of small-signal discretes on multilayer PCBs (REV 1.0) PDF (211.0 kB) AN11076 | 12 Jul 2011 |
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plastic surface-mounted package; 6 leads (REV 1.0) PDF (188.0 kB) SOT666 | 08 Feb 2016 |
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Tape reel SMD; standard product orientation 12NC ending 115 (REV 1.0) PDF (178.0 kB) SOT666_115 | 29 Nov 2012 |
Name/Description | Modified Date |
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PBSS5160V NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS5160V_1 | 31 Jan 2015 |
PBSS5160V NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5160V_NXP_PRODUCT_QUALITY | 31 Jan 2015 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE | 30 Sep 2013 |
Product | Status | Package version | Package name | Size (mm) | transistor polarity | Transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | VCEsat [max] (mV) | RCEsat [max] (mΩ) |
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PBSS5160V | Active | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | PNP | 1 | 300 | -60 | -0.9 | -2 | 200 | 350 | 150 | 220 | 220 | -160 | 330 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSS5160V | SOT666 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PBSS5160V,115 (9340 581 14115) | 51 | PBSS5160V | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |