PMDXB600UNE: 20 V, dual N-channel Trench MOSFET
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
sot1216_3d
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| 20 V, dual N-channel Trench MOSFET (REV 2.0) PDF (252.0 kB) PMDXB600UNE [English] | 01 Jul 2015 |
Application Notes (7)
| Name/Description | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| NXP® MOSFETs and bipolar transistors in DFN1010; Small and Powerful (REV 1.0) PDF (1.8 MB) 75017485 [English] | 04 Nov 2013 |
Selector Guides (2)
| Name/Description | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals (REV 1.0) PDF (199.0 kB) SOT1216 [English] | 08 Feb 2016 |
Packing (1)
| Name/Description | Modified Date |
|---|---|
| DFN1010B-6; Reel pack, SMD, 7" Q2/T3 Turned 90 degree product orientation Orderable part number ending, 147 or... (REV 1.0) PDF (202.0 kB) SOT1216_147 [English] | 06 Oct 2015 |
Reliability and Quality Information (2)
| Name/Description | Modified Date |
|---|---|
| PMDXB600UNE NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMDXB600UNE_1 [English] | 31 Jan 2015 |
| PMDXB600UNE NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMDXB600UNE_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
Supporting Information (2)
| Name/Description | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English] | 31 Oct 2016 |
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
SPICE model
- PMDXB600UNE Spice model (REV 1.0) lib PMDXB600UNE_29_08_2013 12/13/2013
Ordering Information
| Product | Status | Package name | Package version | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | VGSth [typ] (V) | Qr [typ] (nC) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDXB600UNE | Active | DFN1010B-6 | SOT1216 | N | 2 | 20 | 620 | 850 | 150 | 0.6 | 0.1 | 0.4 | 0.4 | 0.265 | 0.7 | N | 21.3 | 5.4 | 2013-09-16 |
Package Information
| Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMDXB600UNE | | SOT1216 | Reflow_Soldering_Profile | Reel 7" Q2/T3 | Active | PMDXB600UNEZ (9340 676 55147) | 00/n10/n00 | PMDXB600UNE |    | Always Pb-free | 234.0 | 1.08 | 9.26E8 | 1 | 1 |
- 20 V, dual N-channel Trench MOSFET PMDXB600UNE
- Using power MOSFETs in parallel BUK7M12-60E
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- NXP® MOSFETs and bipolar transistors in DFN1010; Small and Powerful PBSS5260QA
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- PMDXB600UNE NXP® Product Reliability PMDXB600UNE
- PMDXB600UNE NXP® Product Quality PMDXB600UNE
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- PMDXB600UNE Spice model PMDXB600UNE
- DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals BC857QAS
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- DFN1010B-6; Reel pack, SMD, 7" Q2/T3 Turned 90 degree product orientation Orderable part number ending, 147 or... BC857QAS
- LOW_RDSON_MOSFETS_IN_ULTRA_SMALL_DFN1010_SINGLE_AND_DUAL_PACKAGE
