PSMN2R4-30YLD: N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
SOT669
Brushed and brushless motor control
Data Sheets (1)
Application Notes (6)
Brochures (1)
Selector Guides (2)
Package Information (1)
Packing (1)
Supporting Information (1)
SPICE model
Thermal design
Thermal model
Ordering Information
Product | Status | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | ID [max] (A) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Qr [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | VGSth [typ] (V) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
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PSMN2R4-30YLD | Active | SOT669 | LFPAK56; Power-SO8 | N | 1 | 30 | | 2.4 | 3.1 | | 175 | 5.3 | 100 | 18 | 18 | 20 | 34 | 1.7 | 106 | N | 2256 | 1175 | 2013-10-02 |
Package Information
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | MSL | MSL LF |
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PSMN2R4-30YLD | | SOT669 | | Reel 7" Q1/T1 | Active | PSMN2R4-30YLDX
(9340 679 65115) | 2D430L | PSMN2R4-30YLD | | 1 | 1 |