2N5302: High Power NPN Bipolar Power Transistor _ BDTIC a Leading Distributor in China

2N5302: High Power NPN Bipolar Power Transistor

The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.

Features

Low Collector-Emitter Saturation Voltage VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
Pb-Free Package is Available

Packages

2N5302 Packages

Simulation Models (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	2N5302.LIB (0.0kB)	0
Saber Model	2N5302.SIN (1.0kB)	0
Spice2 Model	2N5302.SP2 (0.0kB)	0
Spice3 Model	2N5302.SP3 (0.0kB)	0

Package Drawings (1)

Document Title	Document ID/Size	Revision
TO-204 (TO-3)	1-07 (32kB)	Z

Data Sheets (1)

Document Title	Document ID/Size	Revision	Revision Date
High-Power NPN Silicon Transistor	2N5302/D (92.0kB)	2

Order Information

Product	Status	Compliance	Package		MSL*	Container		Budgetary Price/Unit
2N5302G	Active	Pb-free	TO-204-2	1-07	NA	Tray Foam	100	$1.872

Specifications

Product	Polarity	Type	VCE(sat) Max (V)	IC Continuous (A)	V(BR)CEO Min (V)	hFE Min	hFE Max	fT Min (MHz)	PTM Max (W)
2N5302G	NPN	General Purpose	0.75	30	60	15	60	2	200

High-Power NPN Silicon Transistor (92.0kB) 2N5302

PSpice Model 2N5302

Saber Model 2N5302

Spice2 Model 2N5302

Spice3 Model 2N5302

TO-204 (TO-3) 2N6341

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