MJE3439: NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for use in line-operated equipment requiring high fT.

特性
  • High DC Current Gain hFE = 40-160 @ IChFE = 20 mAdc
  • Current Gain Bandwidth Product - fT = 15 MHz (Min) @ IC fT = 10 mAdc
  • Low Output Capacitance Cob = 10 pF (Max) @ f Cob = 1.0 MHz
  • Pb-Free Package is Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJE3439.LIB (0.0kB)0
Saber ModelMJE3439.SIN (1.0kB)0
Spice2 ModelMJE3439.SP2 (0.0kB)0
Spice3 ModelMJE3439.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-22577-09 (31kB)AD
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NPN Silicon High-Voltage Power TransistorsMJE3439/D (76kB)13DEC, 2013
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
MJE3439GActivePb-free Halide freeNPN Bipolar Power TransistorTO-225-377-09NABulk Box500$0.2267
MJE3439Last ShipmentsNPN Bipolar Power TransistorTO-225-377-09NABulk Box500
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJE3439GNPN0.3350152001515
NPN Silicon High-Voltage Power Transistors (76kB) MJE3439
PSpice Model MJE3439
Saber Model MJE3439
Spice2 Model MJE3439
Spice3 Model MJE3439
TO-225 2N5657