MJW21196: Bipolar Transistor, NPN, 250 V, 16 A
The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Features- Total Harmonic Distortion Characterized
- High DC Current Gain –hFE = 20 Min @ IC = 8 Adc
- Excellent Gain Linearity
- High SOA: 2.25 A, 80 V, 1 Second
- Pb-Free Packages are Available
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Packages
Simulation Models (4)
Package Drawings (1)
Document Title | Document ID/Size | Revision |
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TO-247 | 340L-02 (57.4kB) | F |
Data Sheets (1)
Order Information
Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
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MJW21196G | Active | Pb-free
Halide free | TO-247-3 | 340L-02 | NA | Tube | 30 | $2.0 |
MJW21196 | Last Shipments | | TO-247-3 | 340L-02 | NA | Tube | 30 | |
Specifications
Product | Polarity | IC Continuous (A) | VCEO(sus) Min (V) | hFE Min | hFE Max | PTM Max (W) | fT Min (MHz) |
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MJW21196G | NPN | 16 | 250 | 20 | 80 | 200 | 4 |