Automotive Power MOSFET ideal for low power applications. 20V 300mA 1 Ohm Single N-Channel SOT-23 Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
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Document Title | Document ID/Size | Revision | Revision Date |
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High Fidelity Switching Audio Amplifiers Using Power MOSFETs | AN1042/D (139.0kB) | 5 |
Document Title | Document ID/Size | Revision | Revision Date |
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Power MOSFET 300 mAmps, 20 Volts | MMBF0201NLT1/D (103.0kB) | 5 |
Document Title | Document ID/Size | Revision | Revision Date |
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LIB Model For MMBF0201NLT1 | MMBF0201NLT1.LIB (1.0kB) | 0 | |
Power MOSFET 300 mAmps, 20 Volts | MMBF0201NLT1.TXT (2.0kB) | ||
SIN Model For MMBF0201NLT1 | MMBF0201NLT1.SIN (1.0kB) | 0 |
Document Title | Document ID/Size | Revision |
---|---|---|
SOT-23 | 318-08 (62.5kB) | AP |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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MVMBF0201NLT1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 20V, 300mA, 1 Ohm, N-Channel. Logic Level., 20V 300mA 1 Ohm Single N-Channel SOT-23 Logic Level | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.1012 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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MVMBF0201NLT1G | N-Channel | Single | 20 | 20 | 2.4 | 0.3 | 0.225 | 1400 | 1000 | 45 | 25 | 5 |