NGTB20N60L2TF1G: N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode

NGTB20N60L2TF1G is N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode.

Features
  • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V)
  • IGBT tf=67ns typ.
  • Diode VF=1.5V typ. (IF=20A)
  • Diode trr=70ns typ.
  • Adaption of full isolation type package
  • Enhansment type
  • Maxium junction temperature Tj=175°C
Benefits
  • Hhigh efficiency
  • Easy to attach
  • High reliability
Applications
  • Power factor correction of white goods appliance
  • General purpose inverter
End Products
  • Air Conditioner
  • UPS (Online)
  • Nailing Machine
  • AC Servo Motor System
Application Notes (2)
Document TitleDocument ID/SizeRevisionRevision Date
NGTB20N60L2TF1G Application NoteANDNGTB20N60L2TF1G/D (327kB)0Aug, 2014
NGTB20N60L2TF1G Application Note [Comparison with Super Junction MOSFET]ANDNGTB20N60L2TF1G_2/D (485kB)0Mar, 2015
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching DiodeNGTB20N60L2TF1G/D (441kB)0
Simulation Models (1)
Document TitleDocument ID/SizeRevisionRevision Date
NGTB20N60L2TF1G SPICE PARAMETERNGTB20N60L2TF1G-SPICE/D (1kB)0Feb, 2016
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-3PF-3L340AH (31.0kB)A
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB20N60L2TF1GActivePb-free Halide freeTO-3PF-3L340AHNATube30$1.115
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB20N60L2TF1G600201.451.5708464Yes
NGTB20N60L2TF1G高速开关应用 NGTB20N60L2TF1G
NGTB20N60L2TF1G Application Note [Comparison with Super Junction MOSFET] NGTB20N60L2TF1G
NGTB20N60L2TF1G SPICE PARAMETER NGTB20N60L2TF1G
TO-3PF-3L 2SK3748