NGTB20N60T2TF1: IGBT with Low VF Switching Diode, 600 V, 20 A, VCE(sat) ; 1.45 V, N-Channel
This Insulated Gate Bipolar Transistor (IGBT) features a robust and Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features- IGBT VCE(sat) = 1.45 V (typ) [IC = 20 A, VGE = 15 V]
- IGBT tf = 75 ns (typ)
- Diode VF = 1.5 V (typ) [IF = 20 A]
- Diode trr = 80 ns (typ)
- Adaption of full isolation type package
- Pb-Free, Halogen Free and RoHS compliance
- Enhancement type
- Maximum junction temperature Tj = 150°C
| Benefits- Improve efficiency by low loss
- High frequency operation
- Improve efficiency by low loss
- High frequency operation
- Easy operation to mount to heat sink
- Ecology
|
Applications- Power factor correction for white goods appliance
- General purpose inverter
| End Products |
Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-3PF-3L | 340AH (31.0kB) | A |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB20N60T2TF1G | Product Preview | Pb-free
Halide free | TO-3PF-3L | 340AH | NA | Tube | 30 | Contact BDTIC |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB20N60T2TF1G | 600 | 20 | 1.45 | 1.5 | 0.33 | 0.32 | 80 | | 35 | | | 56 | Yes |
