NGTB40N120L3: Ultra Field stop IGBT - 1200V 40A, Low VCEsat
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides superior
performance in demanding switching applications, offering both low on
state voltage and minimal switching loss. The IGBT is well suited for
motor driver applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
Features- Extremely Efficient Trench with Ultra Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for Low VCEsat
- These are Pb−Free Devices
|
Applications- Motor Drive Inverter
- Industrial Switching
- Welding
| End Products |
Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTB40N120L3WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | Contact BDTIC |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB40N120L3WG | 1200 | 40 | 1.55 | 3 | 1.5 | 1.5 | 86 | 12 | 220 | | | 454 | Yes |
