NGTG30N60FWG: IGBT, 600 V, 30 A, PFC, Low Frequency
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features- Optimized for Very Low VCEsat
- Low Switching Loss
- 5µs Short Circuit Capability
| Benefits- Reduces System Power Dissipation
|
Applications- Solar Inverters
- Motor Drives
- Uninterruptible Power Supplies (UPS)
|
Application Notes (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT Ruggedness | AND9127/D (532kB) | 3 | Jan, 2016 |
Data Sheets (1)
Reference Manuals (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| NGTG30N60FWG | Active | Pb-free
Halide free | TO-247-3 | 340L-02 | NA | Tube | 30 | $1.38 |
Specifications
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTG30N60FWG | 600 | 30 | 1.45 | | 0.65 | 0.65 | | | 170 | 5 | | 167 | No |
