NGTG40N120FL2: IGBT 1200V 40A SOLAR/UPS
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
Features- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Optimized for High Speed Switching
- 10 s Short Circuit Capability
- These are Pb−Free Devices
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Applications- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
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Application Notes (3)
Data Sheets (1)
Reference Manuals (1)
Package Drawings (1)
Document Title | Document ID/Size | Revision |
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TO-247 | 340AL (32.3kB) | C |
Order Information
Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
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NGTG40N120FL2WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $3.3 |
Specifications
Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
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NGTG40N120FL2WG | 1200 | 40 | 2 | | 1.1 | 3.4 | | | 313 | 10 | | 535 | No |