Power MOSFET, 30 V, 36 A, Single N Channel, DPAK/IPAK
特性
| 优势
|
应用
| 终端产品
|
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 | EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB) | 3.5 | May, 2015 |
| TRANSIENT WAVEFORM SIMULATOR | TRANSIENT WAVEFORM SIMULATOR (2364.0kB) | 1.2.1 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Power MOSFET, 30 V, 36 A, Single N-Channel, DPAK/IPAK | NTD4970N-D (107kB) | 1 | May, 2014 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Description of the ON Semiconductor MOSFET Model | AND9033CN/D (175.8kB) | 1 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| 3.5 mm IPAK, Straight Lead | 369AD (52.1kB) | B |
| DPAK 4 LEAD Single Gauge Surface Mount | 369AA (62.3kB) | B |
| DPAK INSERTION MOUNT | 369D (51.5kB) | C |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| PSpice Model | NTD4970N.LIB (1.0kB) | 0 | |
| Saber Model | NTD4970N.SIN (1.0kB) | 0 | |
| Spice2 Model | NTD4970N.SP2 (1.0kB) | 0 | |
| Spice3 Model | NTD4970N.SP3 (1.0kB) | 0 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| ONS321A5VGEVB / ONS321B12VGEVB Evaluation Board User's Manual | EVBUM2102/D (1518.0kB) | 0 | |
| ONS321A5VGEVB Bill of Materials ROHS Compliant | ONS321A5VGEVB_BOM_ROHS.PDF (76.0kB) | 0 | |
| ONS321A5VGEVB Gerber Layout Files (Zip Format) | ONS321A5VGEVB_GERBER.ZIP (250.0kB) | 0 | |
| ONS321A5VGEVB Schematic | ONS321A5VGEVB_SCHEMATIC.PDF (343.0kB) | 0 | |
| ONS321A5VGEVB Test Procedure | ONS321A5VGEVB_TEST_PROCEDURE.PDF (808.0kB) | 0 | |
| ONS321B12VGEVB Bill of Materials ROHS Compliant | ONS321B12VGEVB_BOM_ROHS.PDF (75.0kB) | 0 | |
| ONS321B12VGEVB Gerber Layout Files (Zip Format) | ONS321B12VGEVB_GERBER.ZIP (250.0kB) | 0 | |
| ONS321B12VGEVB Schematic | ONS321B12VGEVB_SCHEMATIC.PDF (343.0kB) | 0 | |
| ONS321B12VGEVB Test Procedure | ONS321B12VGEVB_TEST_PROCEDURE.PDF (807.0kB) | 0 |
| 产品 | 状况 | Compliance | 简短说明 |
|---|---|---|---|
| ONS321A5VGEVB | Active | Pb-free | 5 Vgs MOSFET Evaluation Board |
| ONS321B12VGEVB | Active | Pb-free | 12 Vgs MOSFET Evaluation Board |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| NTD4970N-1G | Last Shipments | Pb-free Halide free | Power MOSFET 30V 36A 11 mOhm Single N-Channel DPAK | IPAK-4 | 369D | 1 | Tube | 75 | |
| NTD4970N-35G | Active | Pb-free Halide free | Power MOSFET 30V 36A 11 mOhm Single N-Channel DPAK | IPAK-3 | 369AD | 1 | Tube | 75 | $0.3067 |
| NTD4970NT4G | Active | Pb-free Halide free | Power MOSFET 30V 36A 11 mOhm Single N-Channel DPAK | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.3067 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTD4970N-35G | N-Channel | Single | 30 | 20 | 2.5 | 36 | 24.6 | 21 | 11 | 8.2 | 15.8 | 4 | 7 | 774 | 306 | 161 | |
| NTD4970NT4G | N-Channel | Single | 30 | 20 | 2.5 | 36 | 24.6 | 21 | 11 | 8.2 | 15.8 | 4 | 7 | 774 | 306 | 161 |
