NTHC5513: Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET
This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.
特性- Small Size, 40% Smaller than TSOP-6 Package
- Leadless SMD Package Featuring Complementary Pair
- ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages
- Low RDS(on) in a ChipFET™ Package for High Efficiency Performance
- Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics
- Complentary N Channel and P Channel MOSFET
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应用- Load Switch Applications Requiring Level Shift
DC-DC Conversion Circuits
Drives Small Brushless DC Motors
Designed for Power Management Applications in Portable and Battery Power Products
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应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| ChipFET | 1206A-03 (71.4kB) | K |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTHC5513T1G | Active | Pb-free
Halide free | Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | $0.1733 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTHC5513T1G | Complementary | Dual | 20 | 12 | 1.2 | 3.9 | 2.1 | 115 | 80 | | 4 | | 0.7 | 6 | 180 | 80 | 25 |
