10V Drive Nch MOSFET - RCJ510N25

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RCJ510N25TLActiveLPTS(D2PAK)10001000TapingYes

RCJ510N25 Data Sheet

Specifications
GradeStandard
Package CodeTO-263(D2PAK)
JEITA PackageSC-83
Package Size[mm]10.1x13.1(t=4.5)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]250
Drain Current ID[A]51.0
RDS(on)[Ω] VGS=10V (Typ.)0.048
RDS(on)[Ω] VGS=Drive (Typ.)0.048
Total gate charge Qg[nC]120.0
Power Dissipation (PD)[W]40.0
Drive Voltage[V]10.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Technical Documents
Pin Configuration
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RCJ510N25 RCJ510N25
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RCJ510N25
Thermal Model (lib) RCJ510N25
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60