Nch 30V 8A Middle Power MOSFET - RQ3E080BN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| RQ3E080BNTB | Active | HSMT8 | 3000 | 3000 | Taping | Yes |
RQ3E080BN Data Sheet
Specifications| Grade | Standard | | Package Code | HSMT8(3.3x3.3) | | Package Size[mm] | 3.3x3.3(t=0.8) | | Number of terminal | 8 | | Polarity | Nch | | Drain-Source Voltage VDSS[V] | 30 | | Drain Current ID[A] | 8.0 | | RDS(on)[Ω] VGS=4.5V (Typ.) | 0.016 | | RDS(on)[Ω] VGS=10V (Typ.) | 0.011 | | RDS(on)[Ω] VGS=Drive (Typ.) | 0.016 | | Total gate charge Qg[nC] | 7.2 | | Power Dissipation (PD)[W] | 2.0 | | Drive Voltage[V] | 4.5 | | Mounting Style | Surface mount | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 150 |
Applications- Surveillance Camera for Network
| Technical DocumentsFeatures- Low on - resistance.
- High Power Package (HSMT8).
- Pb-free lead plating; RoHS compliant.
- Halogen Free
Pin Configuration |
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