Nch 30V 12A Middle Power MOSFET - RQ3E120BN

High power package RQ3E120BN is middle power MOSFET for switching application.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RQ3E120BNTBActiveHSMT830003000TapingYes

RQ3E120BN Data Sheet

Specifications
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]12.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0086
RDS(on)[Ω] VGS=10V (Typ.)0.0066
RDS(on)[Ω] VGS=Drive (Typ.)0.0086
Total gate charge Qg[nC]14.0
Power Dissipation (PD)[W]2.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Applications
  • Surveillance Camera for Network
Technical Documents
Features
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free
Pin Configuration
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RQ3E120BN RQ3E120BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RQ3E120BN
Thermal Model (lib) RQ3E120BN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series RQ5E035BN
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