Nch 30V 13A Middle Power MOSFET - RQ3E130BN

RQ3E130BN is high power package MOSFET.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RQ3E130BNTBActiveHSMT830003000TapingYes

RQ3E130BN Data Sheet

Specifications
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]13.0
RDS(on)[Ω] VGS=10V (Typ.)0.0044
RDS(on)[Ω] VGS=Drive (Typ.)0.0067
Total gate charge Qg[nC]16.0
Power Dissipation (PD)[W]2.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Applications
  • Surveillance Camera for Network
Technical Documents
Features
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free
Pin Configuration
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RQ3E130BN RQ3E130BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model RQ3E130BN
Thermal Model (lib) RQ3E130BN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60