Nch 30V 20A Middle Power MOSFET - RS1E200BN

Middle Power MOSFET RS1E200BN is suitable for switching power supply.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RS1E200BNTBActiveHSOP8(Single)25002500TapingYes

RS1E200BN Data Sheet

Specifications
GradeStandard
Package CodeHSOP8S(5x6)
Package Size[mm]5.0x6.0(t=1.0)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]80.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0038
RDS(on)[Ω] VGS=10V (Typ.)0.0028
RDS(on)[Ω] VGS=Drive (Typ.)0.0038
Total gate charge Qg[nC]29.0
Power Dissipation (PD)[W]25.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Applications
  • Surveillance Camera for Network
Technical Documents
Pin Configuration
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RS1E200BN RS1E200BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RS1E200BN
Thermal Model (lib) RS1E200BN
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60
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