4V Drive Nch MOSFET (Corresponds to AEC-Q101) - RSD100N10FRA
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| RSD100N10FRATL | Active | CPT3 | 2500 | 2500 | Taping | Yes |
RSD100N10FRA Data Sheet
Specifications| Grade | Automotive | | Common Standard | AEC-Q101 | | Package Code | TO-252(DPAK) | | JEITA Package | SC-63 | | Package Size[mm] | 6.5x9.5(t=2.3) | | Number of terminal | 3 | | Polarity | Nch | | Drain-Source Voltage VDSS[V] | 100 | | Drain Current ID[A] | 10.0 | | RDS(on)[Ω] VGS=4V(Typ.) | 0.105 | | RDS(on)[Ω] VGS=4.5V(Typ.) | 0.1 | | RDS(on)[Ω] VGS=10V(Typ.) | 0.095 | | RDS(on)[Ω] VGS=Drive (Typ.) | 0.105 | | Total gate charge Qg[nC] | 18.0 | | Power Dissipation (PD)[W] | 20.0 | | Drive Voltage[V] | 4.0 | | Mounting Style | Surface mount | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 150 |
| Technical DocumentsPin Configuration |
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