• 简体中文
• English

1.5V Drive Pch+SBD MOSFET - TT8U2

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

TT8U2 Data Sheet

Specifications Grade Standard Package Code TSST8 Package Size[mm] 3.0x1.9(t=0.8) Number of terminal 8 Polarity Pch+Schottky Drain-Source Voltage VDSS[V] -20 Drain Current ID[A] -2.4 RDS(on)[Ω] VGS=1.5V (Typ.) 0.18 RDS(on)[Ω] VGS=2.5V (Typ.) 0.105 RDS(on)[Ω] VGS=4.5V (Typ.) 0.08 RDS(on)[Ω] VGS=Drive (Typ.) 0.18 Total gate charge Qg[nC] 6.7 Power Dissipation (PD)[W] 1.0 Drive Voltage[V] -1.5 Reverse voltage VR (Diode) [V] 20.0 Forward Current IF (Diode) [A] 1.0 Forward Current Surge Peak IFSM (Diode) [A] 3.0 Mounting Style Surface mount Storage Temperature (Min.)[°C] -55 Storage Temperature (Max.)[°C] 150 Applications POS (Point Of Sales System)

Technical Documents Spice Model (lib) Thermal Model (lib) NE Handbook Series Package Information Taping Specifications Condition Of Soldering Storage Conditions Reliability Information Operation Notes Operation Notes Part Explanation Pin Configuration

Related Product