• 简体中文
• English

JANS2ST3360K：Hi-Rel NPN-PNP complementary transistors 60 V, 0.8 A

The JANS2ST3360K power bipolar transistor is a fast, dual complementary matched device (NPN and PNP) housed in a single Flat-8 hermetic package, intended for aerospace Hi-Rel and Rad-hard applications. ST’s high current density technology ensures high levels of electrical and switching performance. Due to its radiation hardness specific design, the post radiation performance makes it the best in its class. The high switching performance allows this device to be particularly suitable for power MOSFET driver applications. It is qualified in the JANS system as per MIL-PRF19500. In case of mismatches between this datasheet and the specification of the agency, the latter takes precedence.

Key Features

• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast-switching speed: FT= 130 MHz
• Hermetic package
• JANS qualified

Product Specifications

Technical Notes & Articles

Selection Guides

Sample & Buy

Quality & Reliability