LET16060C：60W 28V 1.6GHz LDMOS TRANSISTOR
The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT
(@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
Product Specifications
Application Notes
HW Model & CAD Libraries
Presentations
Flyers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET16060C | 1000 | 60.255 | M243 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET16060C | M243 | Industrial | Ecopack1 | |
