PD20015C：15W 13.6V 2GHz LDMOS in M243 ceramic package
The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and reliability of STs latest LDMOS technology.
PD20015Cs superior linearity performance makes it an ideal solution for mobile application.
Key Features
- In compliance with the 2002/95/EC european directive
- Excellent thermal stability
- POUT
= 15 W with 11 dB gain @ 2 GHz / 13.6 V
- Common source configuration
- ESD protection
- BeO free package
Product Specifications
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD20015C | M243 | Loose Piece | - | - | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD20015C | M243 | Industrial | Ecopack1 | |
