SD57120：120W 28V 700 to 1000MHz LDMOS TRANSISTOR in push-pull package
The SD57120 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity.
Key Features
- In compliance with the 2002/95/EC european directive
- Excellent thermal stability
- POUT
= 120W with 13dB gain @ 960MHz
- Common source configuration push-pull
- Internal input matching
- BeO free package
Product Specifications
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| SD57120 | - | - | M252 | Tube | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| SD57120 | M252 | Industrial | Ecopack1 | |
