STB18NM80：N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STB18NM80 | D2PAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
