STD46P4LLF6：P-channel 40 V, 0.0125 Ohm typ., 46 A STripFET F6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS10119: P-channel 40 V, 0.0125 Ω typ., STripFET™ F6 Power MOSFET in a DPAK package3.0894 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD46P4LLF6 PSpice model1.08 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD46P4LLF6DPAKTape And Reel1.151000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD46P4LLF6DPAKIndustrialEcopack2
P-channel 40 V, 0.0125 Ω typ., STripFET™ F6 Power MOSFET in a DPAK package STD46P4LLF6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STD46P4LLF6
Very low drop voltage regulators with inhibit KFXX
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