STGF10NB60SD:16 A, 600 V low drop IGBT with soft and fast recovery diode
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
Key Features
- Low on-voltage drop (VCE(sat)
)
- High current capability
- Very soft ultra fast recovery antiparallel diode
Product Specifications
Application Notes
HW Model & CAD Libraries
Brochures
Software Development Tools
Part Number | Manufacturer | Description |
---|
ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STGF10NB60SD | TO-220FP | Tube | 1 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability