STH160N4LF6-2：N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Key Features
- RDS(on)
* Qg
industry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STH160N4LF6-2 | H2PAK-2 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STH160N4LF6-2 | H2PAK-2 | Industrial | Ecopack1 | |
