STH3N150-2：N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in H2PAK-2 package
These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STH3N150-2 | H2PAK-2 | Tape And Reel | 5 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
