STI11NM80：N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in I2PAK
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)
*Qg in the industry
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STI11NM80 | I2PAK | Tube | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STI11NM80 | I2PAK | Industrial | Ecopack1 (*) | |
