STL12P6F6：P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package

This device is an P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS9554: P-channel 60 V, 0.13 Ω typ., 12 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package2.01 MB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STL12P6F6PowerFLAT 5x6Tape And Reel0.61000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STL12P6F6PowerFLAT 5x6IndustrialEcopack2md_er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r1er-wspc-6p6ab62.pdf
md_er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r1er-wspc-6p6ab62.xml
P-channel 60 V, 0.13 Ω typ., 12 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package STL12P6F6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
md_er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r1er-wspc-6p6ab62.pdf STL12P6F6
md_er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r1er-wspc-6p6ab62.xml STL12P6F6
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