STP110N10F7:N-channel 100 V, 5.1 mOhm typ., 110 A STripFET F7 Power MOSFET in TO-220 package
These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Key Features
- Ultra low on-resistance
- 100% avalanche tested
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
Part Number | Manufacturer | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
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STP110N10F7 | TO-220AB | Tube | 2.5 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STP110N10F7 | TO-220AB | Industrial | Ecopack2 | |